Epitaxial growth of Fe on GaAs by ion beam sputtering

Surface Science

Volumn 482-485, Issue PART 2, 2001, Pages 872-877

  Monteverde, F ^a   Michel, A ^a   Guerin Ph ^a   Eymery, J P ^a  

^a UNIVERSITÉ DE POITIERS   (France)

Author keywords

Epitaxy; Gallium arsenide; Iron; Metal semiconductor interfaces; Sputter deposition; X ray scattering, diffraction, and reflection

Indexed keywords

EID: 0001435546     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(01)00821-4     Document Type: Article

References (9)

1. G.A. Prinz, J.J. Krebs, Appl. Phys. Lett. 39 (1981) 397.
2. S.B. Quadri, M. Goldenberg, G.A. Prinz, J.M. Ferrari, J. Vac. Sci. Technol. B 3 (1985) 718.
3. J.J. Krebs, B.T. Jonker, G.A. Prinz, J. Appl. Phys. 61 (1987) 2596.
4. S. Kreuzer, K. Prügl, G. Bayreuther, D. Weiss, Thin Solid Films 318 (1998) 219.
5. S.D. Bernstein, T.Y. Wong, R.W. Tustison, J. Appl. Phys. 72 (1992) 4358.
6. S.D. Bernstein, T.Y. Wong, R.W. Tustison, J. Vac. Sci. Technol. B 12 (1994) 605.
7. S.D. Bernstein, T.Y. Wong, R.W. Tustison, J. Vac. Sci. Technol. A 17 (1999) 571.
8. F. Monteverde, A. Michel, A. Kherici, J.-P. Eymery, Thin Solid Films 379 (2000) 114.
9. B. Lépine, S. Ababou, A. Guivarc'h, G. Jézéquel, S. Députier, R. Guérin, A. Filipe, A. Schuhl, F. Abel, C. Cohen, A. Rocher, J. Crestou, J. Appl. Phys. 83 (1998) 3077.