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Volumn 222, Issue 3, 2001, Pages 452-458
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In situ cleaning of GaN/6H-SiC substrates in NH3
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Author keywords
[No Author keywords available]
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Indexed keywords
AMMONIA;
ANNEALING;
CARBON;
CHEMICAL CLEANING;
DESORPTION;
IN SITU PROCESSING;
OXYGEN;
SEMICONDUCTOR DOPING;
SILICON CARBIDE;
SUBSTRATES;
SURFACE ROUGHNESS;
GALLIUM NITRIDE;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 0035151542
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(00)00947-7 Document Type: Article |
Times cited : (17)
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References (15)
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