III-nitride dry etching: Comparison of inductively coupled plasma chemistries

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 17, Issue 4, 1999, Pages 2202-2208

  Cho, H ^a   Hahn, Y B ^a,c   Hays, D C ^a   Abernathy, C R ^a   Donovan, S M ^a   MacKenzie, J D ^a   Pearton, S J ^a   Han, J ^b   Shul, R J ^b  

^a University of Florida   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BORON HALIDES; CONTROL SAMPLES; ETCH PRODUCTS; ETCH SELECTIVITY; HIGH VOLATILITY; III-NITRIDE; INDUCTIVELY-COUPLED; LOWER BOND STRENGTH; MAXIMUM SELECTIVITY; SYSTEMATIC STUDY;

BORON; ELECTROMAGNETIC INDUCTION; GALLIUM ALLOYS; GALLIUM NITRIDE; PLASMA ETCHING;

INDUCTIVELY COUPLED PLASMA;

EID: 0037930038     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582037     Document Type: Conference Paper

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