Growth and device performance of InP/GaAsSb HBTS

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2003, Pages 380-384

  Yi, S S ^a   Chung, S J ^a   Rohdin, H ^a   Hueschen, M ^a   Bour, D ^a   Moll, N ^a   Chamberlin, D R ^a   Amano, Jun ^a  

^a AGILENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; LUMINESCENCE; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR SUPERLATTICES; AMPLIFICATION; CUTOFF FREQUENCY; DOPING (ADDITIVES); ELECTRIC INDUCTORS; EPITAXIAL GROWTH; EPITAXIAL LAYERS; GAS SOURCE MOLECULAR BEAM EPITAXY; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; INDIUM; INDIUM PHOSPHIDE; MOLECULAR BEAMS; SEMICONDUCTING GALLIUM; SUPERLATTICES; TEMPERATURE;

GAS PHASE MOLECULAR BEAM EPITAXY; HOLE CONCENTRATIONS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

BASE EMITTERS; CURRENT GAIN CUTOFF FREQUENCY; DC CHARACTERISTICS; DEVICE PERFORMANCE; HETEROJUNCTION BIPOLAR TRANSISTOR (HBTS); HIGH-FREQUENCY APPLICATIONS; METAL-ORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXIAL GROWTH;

EID: 0037810811     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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