Composite step-graded collector of InP/InGaAs/lnP DHBT for minimised carrier blocking

Electronics Letters

Volumn 32, Issue 15, 1996, Pages 1409-1410

  Chor, E F ^a   Peng, C J ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Heterojunction bipolar transistors; Semiconductor devices

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC CURRENT COLLECTORS; ELECTRIC VARIABLES MEASUREMENT; HETEROJUNCTIONS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING;

BAND DIAGRAM; CARRIER BLOCKING; COMPOSITE STEP GRADED COLLECTOR;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030194529     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960889     Document Type: Article

References (3)

1. OHKUBO, M., IKETANI, A., IJICHI, T., and KIKUTA, T.: 'InGaAs/InP double-heterojunction bipolar transistors with step graded InGaAsP between InGaAs base and InP collector grown by metalorganic chemical vapor deposition', Appl. Phys. Lett., 1991, 59, (21), pp. 2697-2699
2. KURISHIMA, K., NAKAJIMA, H., KOBAYASHI, T., MATSUOKA, Y., and ISHIBASHI, T.: 'Fabrication and characterization of high-performance InP/InGaAs double-heterojunction bipolar transistors', IEEE Trans. Electron. Devices, 1994, ED-41, (8), pp. 1319-1326
3. WILLEN, B., WESTERGREN, U., and ASONEN, H.: 'High-gain, high-speed InP/InGaAs Double-heterojunction Bipolar transistors with step-graded base-collector heterojunction', IEEE Electron. Device Lett., 1995, EDL-16, (11), pp. 479-481