A > 400 GHz fmax transferred-substrate heterojunction bipolar transistor IC technology

IEEE Electron Device Letters

Volumn 19, Issue 3, 1998, Pages 77-79

  Lee, Q ^a   Agarwal, B ^a   Mensa, D ^a   Pullela, R ^a   Guthrie, J ^a   Samoska, L ^a   Rodwell, M J W ^a  

^a University of California   (United States)

Author keywords

HBT; High speed; InP; Transferred substrate

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; FABRICATION; OHMIC CONTACTS; PERMITTIVITY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES; TECHNOLOGY;

HEAT SINKING; TRANSFERRED SUBSTRATE HETEROJUNCTION BIPOLAR TRANSISTOR;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032026428     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.661170     Document Type: Article

References (7)

1. max," IEEE Electron Device Lett., vol. 16, pp. 357-359, 1995.
2. max transferredsubstrate heterojunction bipolar transistor," IEEE Electron Device Lett., vol. 18, pp. 228-231, 1997.
3. max transferred-substrate HBT integrated circuit technology," in Device Res. Conf. Tech. Dig., 1997, p. HIB-2.
4. P. J. Zampardi and D.-S Pan, "Delay of Kirk effect due to collector current spreading in heterojunction bipolar transistors," IEEE Electron Device Lett., vol. 17, pp. 470-472, 1996.
5. G. Stareev and H. Künzel, "Tunneling behavior of extremely low resistance nonalloyed Ti/Pt/Au contacts to n(p)-InGaAs and n-InAs/InGaAs," J. Appl. Phys., vol. 74, pp. 7592-7595, 1993.
6. Y. Matsuoka, S. Yamahata, K. Kurishima, and H. Ito, "Ultrahigh-speed InP/InGaAs double-heterostructure bipolar transistors and analyses of their operation," J. Appl. Phys., vol. 35, pp. 5646-5654, 1996.
7. K. Kurishima, H. Nakajima, S. Yamahata, T. Kobayashi, and Y. Matsuoka, "Growth, design, and performance of InP-based heterostructure bipolar transistors," IEICE Trans. Electron., vol. E78-C, pp. 1171-1181, 1995.