Effect of dopant atoms on the roughness of III-V semiconductor cleavage surfaces

Applied Physics Letters

Volumn 76, Issue 3, 2000, Pages 300-302

  Quadbeck, P ^a   Ebert, Ph ^a   Urban, K ^a   Gebauer, J ^b   Krause Rehberg, R ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0013068542     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125726     Document Type: Article

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