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Volumn 338, Issue 1-2, 1999, Pages 281-285

Thin film transistors in low temperature as-deposited and reduced-crystallization-time polysilicon on 665°C strain point glass substrates

(5) Hatalis, M K a Kouvatsos, D N a,d Kung, J H a Voutsas, A T b Kanicki, J c

a Lehigh University (United States)

b Sharp Microelectronics Technology Inc Inc (United States)

c The Department of Civil and Environmental Engineering (United States)

d INSTITUTE OF MICROELECTRONICS (Greece)

Author keywords

Chemical vapour deposition; Crystallization; Glass; Semiconductors

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; FILM PREPARATION; LOW TEMPERATURE OPERATIONS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING GLASS; SEMICONDUCTING SILICON COMPOUNDS; THIN FILM TRANSISTORS;

POLYSILICON THIN FILM TRANSISTORS;

SEMICONDUCTING FILMS;

EID: 0032715897 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(98)01075-X Document Type: Article

Times cited : (10)

References (14)

1
- 0024739599
- J.I. Ohwada, M. Takabatake, Y.A. Ono, A. Mimura, K. Ono, N. Konishi, IEEE Transactions on Electron Devices ED-36 (1989) 1923.
- (1989) IEEE Transactions on Electron Devices , vol.ED-36 , pp. 1923
- Ohwada, J.I.¹ Takabatake, M.² Ono, Y.A.³ Mimura, A.⁴ Ono, K.⁵ Konishi, N.⁶

2
- 0009664998
- T. Yamashita, T. Matsumoto, T. Shimada, et al., SID 1994 Digest (1994) 83.
- (1994) SID 1994 Digest , pp. 83
- Yamashita, T.¹ Matsumoto, T.² Shimada, T.³

3
- 0009718395
- M. Matsuo, T. Hashizume, S. Inoue, M. Miyasaka, S. Takenaka, I. Yudasaka, H. Ohsima, SID 1994 Digest (1994) 87.
- (1994) SID 1994 Digest , pp. 87
- Matsuo, M.¹ Hashizume, T.² Inoue, S.³ Miyasaka, M.⁴ Takenaka, S.⁵ Yudasaka, I.⁶ Ohsima, H.⁷

4
- 0023401951
- M.K. Hatalis, D.W. Greve, IEEE Electron Dev. Lett. 8 (1987) 361.
- (1987) IEEE Electron Dev. Lett. , vol.8 , pp. 361
- Hatalis, M.K.¹ Greve, D.W.²

5
- 0001507777
- G. Radnoczi, A. Robertsson, H.T.G. Hentzell, S.F. Gong, M.A. Hasan, J. Appl. Phys. 69 (1991) 6394.
- (1991) J. Appl. Phys. , vol.69 , pp. 6394
- Radnoczi, G.¹ Robertsson, A.² Hentzell, H.T.G.³ Gong, S.F.⁴ Hasan, M.A.⁵

6
- 0028428652
- T.J. Konno, R. Sinclair, Mater. Sci. Eng. A179/A180 (1994) 426.
- (1994) Mater. Sci. Eng. , vol.A179-A180 , pp. 426
- Konno, T.J.¹ Sinclair, R.²

7
- 36449009173
- S.W. Lee, Y.C. Jeon, S.K. Joo, Appl. Phys. Lett. 66 (1995) 1671.
- (1995) Appl. Phys. Lett. , vol.66 , pp. 1671
- Lee, S.W.¹ Jeon, Y.C.² Joo, S.K.³

8
- 0030128485
- S.W. Lee, S.K. Joo, IEEE Electron Device. Lett. 17 (1996) 160.
- (1996) IEEE Electron Device. Lett. , vol.17 , pp. 160
- Lee, S.W.¹ Joo, S.K.²

9
- 0027266119
- A.T. Voutsas, M.K. Hatalis, J. Electrochem. Soc. 140 (1993) 282.
- (1993) J. Electrochem. Soc. , vol.140 , pp. 282
- Voutsas, A.T.¹ Hatalis, M.K.²

10
- 0000207607
- A.T. Voutsas, M.K. Hatalis, J. Appl. Phys. 76 (1994) 777.
- (1994) J. Appl. Phys. , vol.76 , pp. 777
- Voutsas, A.T.¹ Hatalis, M.K.²

11
- 0028386337
- A.T. Voutsas, M.K. Hatalis, J. Electron. Mater. 23 (1994) 319.
- (1994) J. Electron. Mater. , vol.23 , pp. 319
- Voutsas, A.T.¹ Hatalis, M.K.²

12
- 0028733102
- D.M. Moffat, Mater. Res. Soc. Symp. Proc. 345 (1994) 163.
- (1994) Mater. Res. Soc. Symp. Proc. , vol.345 , pp. 163
- Moffat, D.M.¹

13
- 0026915578
- A.T. Voutsas, M.K. Hatalis, J. Electrochem. Soc. 139 (1992) 2659.
- (1992) J. Electrochem. Soc. , vol.139 , pp. 2659
- Voutsas, A.T.¹ Hatalis, M.K.²

14
- 0000332717
- A.T. Voutsas, M.K. Hatalis, J. Boyce, A. Chiang, J. Appl. Phys. 78 (1995) 6999.
- (1995) J. Appl. Phys. , vol.78 , pp. 6999
- Voutsas, A.T.¹ Hatalis, M.K.² Boyce, J.³ Chiang, A.⁴

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