SCOPUS 정보 검색 플랫폼

Volumn 92, Issue 8, 2002, Pages 4470-4474

Study of the electronic structure of amorphous and crystallized low pressure chemically vapor deposited silicon films near the absorption threshold

(2) Davazoglou, D a Kouvatsos, D N a

a INSTITUTE OF MICROELECTRONICS (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

BRILLOUIN ZONES; CONVENTIONAL REACTORS; CRYSTALLOGRAPHIC AXES; CRYSTALLOGRAPHIC DIRECTIONS; DENSITY OF STATE; ELECTRONIC TRANSITION; EVAPORATED FILMS; GRAIN SIZE; K POINTS; LOW-PRESSURE CHEMICALLY VAPOR DEPOSITED; OPTICAL TRANSMISSION MEASUREMENTS; POST DEPOSITION TREATMENT; PROCESSING STEPS; QUARTZ SUBSTRATE; SILICON FILMS; TWO-BAND MODEL; X-RAY DIFFRACTION MEASUREMENTS;

CHEMICAL VAPOR DEPOSITION; ELECTRONIC STRUCTURE; METALLIC FILMS; OPTICAL PROPERTIES; PHOSPHORUS; PHOTOELECTRON SPECTROSCOPY; QUARTZ; SUBSTRATES; VAPORS; X RAY DIFFRACTION;

AMORPHOUS FILMS;

EID: 18744403666 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1508431 Document Type: Article

Times cited : (9)

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2
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