Improved stability of short-channel hydrogenated N-channel polycrystalline silicon thin-film transistors with very thin ECR N2O-plasma gate oxide

IEEE Electron Device Letters

Volumn 19, Issue 12, 1998, Pages 458-460

  Lee, Jin Woo ^a,c   Lee, Nae In ^a,b   Han, Chul Hi ^a,c  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c NONE

Author keywords

Hot carrier effects; Poly Si TFT; Short channel; Stability

Indexed keywords

ELECTRON CYCLOTRON RESONANCE; HETEROJUNCTIONS; HOT CARRIERS; HYDROGENATION; NITROGEN COMPOUNDS; OXIDATION; PLASMA APPLICATIONS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON;

FOWLER-NORDHEIM STRESS;

THIN FILM TRANSISTORS;

EID: 0032292317     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.735745     Document Type: Article

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