High-performance thin-film transistors in large grain size polysilicon deposited by thermal decomposition of disilane

IEEE Transactions on Electron Devices

Volumn 43, Issue 9, 1996, Pages 1399-1406

  Kouvatsos, Dimitrios N ^a   Voutsas, Apostolos T ^b   Halalis, Miltiadis K ^c  

^a Lehigh University   (United States)

^b INSTITUTE OF MICROELECTRONICS   (Greece)

^c Sharp Microelectronics Technology Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; GATES (TRANSISTOR); GRAIN SIZE AND SHAPE; LEAKAGE CURRENTS; POLYCRYSTALLINE MATERIALS; PYROLYSIS; SEMICONDUCTOR GROWTH; SILICON;

DISILANE; GATE DIELECTRIC; STATISTICAL DISTRIBUTION; SUBTHRESHOLD SLOPE;

THIN FILM TRANSISTORS;

EID: 0030244382     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.535325     Document Type: Article

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