Polycrystalline silicon thin film transistors fabricated at reduced thermal budgets by utilizing fluorinated gate oxidation

IEEE Transactions on Electron Devices

Volumn 43, Issue 9, 1996, Pages 1448-1453

  Kouvatsos, Dimitrios N ^a,b   Halalis, Miltiadis K ^a,c  

^a IEEE

^b Lehigh University   (United States)

^c INSTITUTE OF MICROELECTRONICS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION; FLUORINE; GATES (TRANSISTOR); INTERFACES (MATERIALS); OXIDATION; PASSIVATION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; THERMAL EFFECTS;

ELECTRON MOBILITY; FLUORINATED GATE OXIDATION; SUBTHRESHOLD SLOPES; THERMAL BUDGETS; THRESHOLD VOLTAGE;

THIN FILM TRANSISTORS;

EID: 0030241384     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.535331     Document Type: Article

References (24)

1. A. Juliana, S. W. Depp, B. Huth, and T. Sedgwick, "Thin-film polysilicon devices for flat panel display circuitry," Soc. Inform. Dhpl. Symp. Dig., 1982, p. 38.
2. B. W. Faughnan and R. G. Stewart, "Polysilicon active-matrix liquidcrystal displays," Inform. DispL, vol. 5, no. 10, p. 8, Oct. 1989.
3. R. Bruce, M. Hack, A. Lewis, and I.-W. Wu. "Polysilicon: The next wave for TFTs?" Inform. DispL, vol. 7, no. 10, p. 14, Oct. 1991.
4. A. Mimura, N. Konishi, K. Ono, J.-l. Ohwada, Y. Hosokawa, Y. A. Ono, T. Suzuki, K. Miyata, and H. Kawakami, "High performance lowtemperature poly-Si -channel TFT's for LCD's," IEEE Trans. Elertrnn Devices, vol. 36, no. 2, p. 418, Feb. 1989.
5. S. D. S. Malhi, H. Shichijo, S. K. Banerjee, R. Sundaresan, M. Elehy. Ü. P. Pollack, W. F. Richardson, A. H. Shah, L. R. Hite, R. H. Womack, P. K. Chatterjee. and H. W. Lam, "Characteristics and three dimensional integration of MOSFET's in small-grain LPCVD polycrystalline silicon," IEEE Trans. Electron Devices, vol. ED-32, no. 2, p. 258, 1985.
6. J. Kanicki, F. R. Libsch, J. Griffith, and R. Polastre, "Performance of thin hydrogenated amorphous silicon thin-film transistors," J. Appl. Phys., vol. 69, no. 4, p. 2339, Feb. 1991.
7. M. K. Halalis and D. W. Grève, "High-performance thin-film transistors in low-temperature crystallized LPCVD amorphous silicon films," IEEE Electron Device Lett., vol. EDL-8, no. 8, p. 361, Aug. 1987.
8. A. Mimura, J.-I. Ohwada, Y. Hosokawa, T. Suzuki, H. Kawakami, and K. Miyata, "A high resolution active matrix using p-channel SOI TIT's," lEEETmns. Electron Devices, vol. 35, no. 4, p. 351, Apr. 1988.
9. [91 M. K. Hatalis, D. N. Kouvatsos, J.-H. Kung. A. T. Voulsas, F. P. Fehlner, and J. Kanicki, "Low temperature poly-Si TFT's on corning code 1734 and J735 glass substrates," Soc. inform. Disp. Symp. Proc., 1993, vol. 24, p. 724.
10. J. R. Troxell, M. I, Harrington, J. C. Erskine, W. H. Dumbaugh, F. P. Fchlncr, and R. A. Miller, "Polycrystalline silicon thin film transistors on a novel 800°C glass substrate," IEEE Electron Device Lett., vol. EDL-7, no. 11, p. 597, Nov. 1986.
11. M. K. Hatalis, J.-H. Kung, J. Kanicki, and A. A. Bright, "Effect of gate dielectric on performance of polysilicon thin film transistors," Mat. Res. Soc. Svmp. Proc., 1990, vol. 182, p. 357.
12. [121 P. F. "Schmidt, R. J. laccodine, C. H. Wolowodiuk, and T. Kook, "Chemically enhanced thermal oxidation of silicon," Mat. Lett., vol. 3, nos. 5-6, p. 235, Apr. 1985.
13. U. S. Kirn, C. H. Wolowodiuk, R. J. Jaccodine, F. Stevie, and P. Kahora, "The effect of fluorine additions to the oxidation of silicon," J. Electrochem, Soc, vol. 137, no. 7, p. 2291, July 1990.
14. Y. Nishioka, E. F. da Silva, Y. Wang, and T.-P. Ma, "Dramatic improvement of hot-electron induced interface degradation in MOS structures containing F or CI in SiC>2," IEEE Electron Device Lett., vol. 9, p. 38, Sept. 1988.
15. K. Ohyu, T. Itoga, Y. Nishioka, and N. Natsuaki, "Improvement of SiC>2/Si interface properties utilizing fluorine ion implantation and drivein diffusion," Jpn. J. Appl. Phys., vol. 28, no. 8, p. 1041, June 1989.
16. P. J. Wright and K. C. Saraswat, "The effect of fluorine in silicon dioxide gate dielectrics," IEEE Trans. Electron Devices, vol. 36, no, 5, p. 879, May 1989.
17. K. P. MacWilliams, L. F. Halle, and T. C. Zietlow, "Improved hotcarrier resistance wilh fluorinated gate oxides," IEEE Electron Device Lett, vol. 11, no. 1, p. 3, Jan. 1990.
18. D, N. Kouvatsos, M. K. Hatalis, and R. J. Jaccodine, "Fluorine-enhanced oxidation of polycrystalline silicon and application to thin film transistor fabrication," Appl. "Phys. Lett., vol. 61, no. 8, p. 937, Aug. 1992.
19. D. Kouvatsos, F. P. McCluskcy, R. J. Jaccodine, and F. A. Stevie, "Silicon-fluorine bonding and fluorine profiling in SiCh films grown by NFs-enhanced oxidation," Appl. Phys. Lett., vol. 61, no. 7, p. 780. Aug. 1992.
20. D. N. Kouvatsos, F. A. Stevie, and R. J. Jaccodine, "Interface state density reduction and effect of oxidation temperature on fluorine incorporation and profiling for fluorinated metal-oxide semiconductor capacitors," J. Electrochem. Soc., vol. 140, no. 4, p. 1160, Apr. 1993.
21. U. Mitra, J. Chen, B. Khan, and E. Stupp, "Low-temperature polysilicon TFT with gate oxide grown by high-pressure oxidation," IEEE Electron Device Lett., vol. 12, no. 7, p. 390, July 1991.
22. J.-H. Kung, M. K. Ilatalis, and J. Kanicki, "Investigations on the quality of polysilicon film-gate dielectric interface in polysilicon thin film transistors," Thin Solid Films, vol. 216, no. 1, p. 137. Ang. 1992.
23. D. N. Kouvatsos, R. J. Jaccodine, and F. A. Stevie, "Interface trap density reduction and oxide profiling for MUS capacitors with fluorinated gate oxide dielectrics," in The Physics and Chemistry of SiO? and the Si-Si02 Interface. New York: Plenum, 1992, vol. II.
24. D. Kouvatsos, J. G. Huang, and R. J. Jaccodine, "Fluorine enhanced oxidation of silicon-Effects of fluorine on oxide stress and growth kinetics," J. Electrochem. Soc., vol. 138, no. 6. p. 1752, June 1991.