Recombination dynamics in GaN

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 790-793

  Brandt, O ^a   Wunsche H J ^b   Yang, H ^a,c   Klann, R ^a,d   Mullhauser J R ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b HUMBOLDT UNIVERSITY   (Germany)

^c INSTITUTE OF SEMICONDUCTORS   (China)

^d CompuNet GmbH ^*  (Germany)

Author keywords

Excitons; Gan; Recombination

Indexed keywords

CARRIER CONCENTRATION; ELECTRON ABSORPTION; ELECTRON EMISSION; EXCITONS; INTERFACES (MATERIALS);

CARRIER RECOMBINATION; GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032092589     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00295-4     Document Type: Article

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