High hole lifetime (3.8μs) in 4H-S1C diodes with 5.5 kV blocking voltage

Electronics Letters

Volumn 35, Issue 16, 1999, Pages 1382-1383

  Ivanov, P A ^a,b   Levinshtein, M E ^a   Irvine, K G ^a   Kordina, O ^a   Palmour, J W ^a   Rumyantsev, S L ^a   Singh, R ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; ELECTRONICS PACKAGING; MODULATION; SEMICONDUCTOR DOPING; SILICON CARBIDE; TEMPERATURE;

BLOCKING VOLTAGE; HOLE LIFETIME; JUNCTION TERMINATION EXTENSION; OPEN CIRCUIT VOLTAGE DECAY;

SEMICONDUCTOR DIODES;

EID: 0032644812     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990897     Document Type: Article

References (12)

1. KORDINA, O., BERGMAN. J.P., HENRY, A., JANZEN. E., SAVAGE, S., ANDRE, J., RAMBERG, L.P., LINDEFELT, U., HERMANSSON, W., and BERGMAN, K.: 'A 4.5 kV 6H silicon carbide rectifier', Appl. Phys. Lett., 1995, 67, (11), pp. 1561-1563
2. PALMOUR. J.w., siNGH, R., UPKIN, L.A., and WALTZ, D.O.: '4H-siIicon carbide high temperature power devices'. Proc. 3rd Int. HiTEC, Albuquerque, NM, 1996, Paper XVI-9
3. NEUDECK, P.O., and FAZI, c: 'Nanosecond risetime pulse characterization of SiC p+n junction diode breakdown and switching properties'. Materials Science Forum, 1998, Vol. 264268, Part 2, pp. 1037-1040
4. RAMUNGUL, M., KIIEMKA, V., CHOW, T.P., GHEZZO, M., and KRETCHMER, J.: 'Carrier lifetime extraction from a 6H-S1C high voltage p-i-n rectifier reverse recovery waveform'. Materials Science Forum, 1998, Vol. 264-268, Part 2, pp. 1065-1068
5. GOSSIK, B.R.: 'About recovery characteristics of semiconductor rectifiers', J. Appl. Phys., 1956, 27, pp. 905-910
6. LAX, B., and NEUSTADTER, T.: 'Transient response of a p-n junction', J. Appl. Phys.. 1954, 25, pp. 1148-1154
7. VOBECKY, J., HAZDRA. P., and ZAHVALA, v.: 'OCVD lifetime of ion irradiated p-i-n diodes'. 4th. Int. Seminar on Power Semiconductors, ISPS'98, Prague, 1998, pp. 47-52
8. DYAKONOVA, N.V., IVANOV, P.A., KOZLOV, V.A., LEVINSHTEIN. M.E., PALMOUR. J.w., RUMYANTSEV, S.L., and SINGH, R.: 'Steady-state and transient forward current-voltage characteristics of 4H-silicon carbide 5.5 kV diodes at high and superhigh current densities', to be published in IEEE Trans. Electron. Dev, 1999
9. SCHLANGENOTTO. H., and GERLACH, w.: 'On the post-injection voltage decay of the p-s-n rectifiers at high injection levels', SolidStale Electron., 1972, 15, (4), pp. 393-402
10. HERLET, A., and RAITHEL. R.: 'The forward characteristic of silicon power rectifiers at high current densities', Solid-Stale Electron., 1968, 11, pp. 717-742
11. LEVINSHTEIN, M.E., PALMOUR, J.W., RUMYANTSEV, S.L, and SINGH. R.: 'Forward current-voltage characteristics of silicon carbide thyristors and diodes at high current densities', Seinicond. Sei. Teclmol, 1998, 13, (9), pp. 1006-1010
12. LEVINSHTEIN, M.E., PALMOUR, J.W., RUMYANTSEV, S.L., and SINGH, R.: 'Frequency properties of 4H-SiC thyristors at high current density', Semicond. Sei. Techwl., 1999, 14, (2), pp. 207-209