Effect of high injection level phenomena on the feasibility of diffusive approximation in semiconductor device modeling

Solid-State Electronics

Volumn 42, Issue 1, 1998, Pages 153-163

  Mnatsakanov, T T ^a   Schroder D ^b   Schlogl A ^b  

^a ALL RUSSIAN ELECTROTECHNICAL INSTITUTE   (Russian Federation)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CHARGE CARRIERS; CURRENT DENSITY; DIFFUSION IN SOLIDS; SEMICONDUCTOR SUPERLATTICES;

NONLINEAR PHYSICAL PHENOMENA;

SEMICONDUCTOR DEVICE MODELS;

EID: 0031636354     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00265-7     Document Type: Article

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