Frequency properties of 4H-SiC thyristors at high current density

Semiconductor Science and Technology

Volumn 14, Issue 2, 1999, Pages 207-209

  Levinshtein, M E ^a   Palmour, J W ^b   Rumyantsev, S L ^a   Singh, R ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE;

FORWARD BLOCKING VOLTAGES;

THYRISTORS;

EID: 0033075826     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/2/016     Document Type: Article

References (11)

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3. Levinshtein M E, Palmour J W, Rumyantsev S L and Singh R 1997 Semicond. Sci. Technol. 12 1498
4. Xie K, Zhao J H, Flemiish J R, Burke, T, Buchvald W R, Lorenzo G and Singh H 1996 IEEE Electron Device Lett. 17 142
5. Palmour J W, Allen S T and Waltz D G 1995 Techn. Digest of Int. Conf. on SiC and Related Mater. (Kyoto, Japan, 1995) p319
6. Gerlach W 1981 Thyristoren (Heidelberg: Springer)
7. Kuzmin V A 1971 Thyristors of Small and Average Power (Moscow: Sovetskoe Radio) (in Russian)
8. Levinshtein M E, Palmour J W, Rumyantsev S L and Singh R 1998 Semicond Sci. Technol. 13 1006
9. Sze SM 1981 Physics of Semiconductor Devices (New York: Wiley)
10. Strel'chuk A M, Evstropov V V, Dmitriev V A and Cherenkov A E 1995 Semiconductors 29 1136
11. Levinshtein M E, Palmour J W, Rumyantsev S L and Singh R 1998 IEEE Trans. Electron Devices 45 307