Forward current-voltage characteristics of silicon carbide thyristors and diodes at high current densities

Semiconductor Science and Technology

Volumn 13, Issue 9, 1998, Pages 1006-1010

  Levinshtein, M E ^a   Palmour, J W ^b   Rumyantsev, S L ^a   Singh, R ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTATIONAL METHODS; CURRENT VOLTAGE CHARACTERISTICS; DATA REDUCTION; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS;

CRITICAL CHARGE DENSITIES; EMITTER INJECTION COEFFICIENTS; SILICON CARBIDE THYRISTORS;

THYRISTORS;

EID: 0032157779     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/9/007     Document Type: Article

References (14)

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