Investigation into the effect of Auger recombination on charge carrier transport and static characteristics of silicon multilayer structures

Solid-State Electronics

Volumn 41, Issue 12, 1997, Pages 1871-1880

  Mnatsakanov, T T ^a   Pomortseva, L I ^a   Shuman, V B ^a  

^a ALL RUSSIAN ELECTROTECHNICAL INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; MULTILAYERS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING;

AUGER RECOMBINATION; CHARGE CARRIER TRANSPORT; SHOCKLEY READ HALL RECOMBINATION PROCESSES;

SEMICONDUCTING SILICON;

EID: 0031343641     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00066-X     Document Type: Article

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