Temperature dependence of turn-on processes in 4H-SiC thyristors

Solid-State Electronics

Volumn 45, Issue 3, 2001, Pages 453-459

  Levinshtein, Michael E ^a   Mnatsakanov, Tigran T ^b   Ivanov, Pavel A ^a   Agarwal, Anant K ^c   Palmour, John W ^c   Rumyantsev, Sergey L ^a,d   Tandoev, Aleksey G ^b   Yurkov, Sergey N ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b ALL RUSSIAN ELECTROTECHNICAL INSTITUTE   (Russian Federation)

^c Arkansas Power Electronics International Inc   (United States)

^d Rensselaer Polytechnic Institute   (United States)

Author keywords

Silicon carbide; Switch on process; Thyristors; Transient processes

Indexed keywords

CARRIER CONCENTRATION; COMPUTATIONAL METHODS; COMPUTER SIMULATION; HOLE MOBILITY; IONIZATION OF SOLIDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; TRANSIENTS;

HOLE CONCENTRATIONS; SWITCH-ON PROCESS;

THYRISTORS;

EID: 0035275937     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00039-9     Document Type: Article

References (31)

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