SCOPUS 정보 검색 플랫폼

Volumn 144-145, Issue , 1999, Pages 292-296

The advantages of normal incidence ultra-low energy secondary ion mass spectrometry depth profiling

Author keywords

FWHM; SIMS; Layers

Indexed keywords

BORON; ION BEAMS; ION BOMBARDMENT; MULTILAYERS; OXYGEN; SURFACE STRUCTURE;

BEAM INCIDENT ANGLE; FULL WIDTH HALF MAXIMUM; OXYGEN FLOODING; ULTRA LOW ENERGY SECONDARY ION MASS SPECTROMETRY;

SECONDARY ION MASS SPECTROMETRY;

EID: 0032662227 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(98)00812-5 Document Type: Article

Times cited : (27)

References (11)

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- Chu, D.P.¹ Ormsby, T.J.² Dowsett, M.G.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.