Local SiO2 formation in silicon bombarded with oxygen above the critical angle for beam-induced oxidation: New evidence from sputtering yield ratios and correlation with data obtained by other techniques

Surface and Interface Analysis

Volumn 29, Issue 10, 2000, Pages 721-725

  Wittmaack, K ^a  

^a INSTITUTE OF EPIDEMIOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BEAM PLASMA INTERACTIONS; DATA REDUCTION; ION IMPLANTATION; OXIDATION; SPUTTER DEPOSITION; X RAY PHOTOELECTRON SPECTROSCOPY;

ANGULAR DEPENDENCE; OXYGEN BOMBARDMENT; SPUTTERING YIELDS;

SILICA;

EID: 0034299490     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/1096-9918(200010)29:10<721::AID-SIA916>3.0.CO;2-Q     Document Type: Article

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