In search of optimum conditions for the growth of sharp and shallow B-delta markers in Si by molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 1, 2000, Pages 524-258

  Wittmaack, K ^a   Griesche, J ^b   Osten, H J ^b   Patel, S B ^c  

^a INSTITUTE OF EPIDEMIOLOGY   (Germany)

^b IHP   (Germany)

^c Atomika Instruments GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; GROWTH (MATERIALS); MOLECULAR BEAM EPITAXY; SURFACE ROUGHNESS;

MULTIPLE BORON DELTA SPIKES;

AMORPHOUS SILICON;

EID: 0033684849     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591225     Document Type: Article

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