Measurement of interface states parameters of Si1-x-yGexCy/TiW Schottky contacts using Schottky capacitance spectroscopy

Solid-State Electronics

Volumn 43, Issue 4, 1999, Pages 801-808

  Zamora, M ^a   Reeves, G K ^a   Gazecki, G ^a   Mi, J ^b   Yang, C Y ^c  

^a RMIT UNIVERSITY   (Australia)

^b SANTA CLARA UNIVERSITY   (United States)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; INTERFACES (MATERIALS); SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; TITANIUM COMPOUNDS;

NEGATIVE CAPACITANCE EFFECT; SCHOTTKY CAPACITANCE SPECTROSCOPY;

ELECTRIC CONTACTS;

EID: 0032647548     PISSN: 00381101     EISSN: None     Source Type: None    
DOI: 10.1016/S0038-1101(98)00334-7     Document Type: Article

References (12)

1. Rhoderick E.H., Metal-semiconductor contacts. Oxford: Clarendon Press, 1978.
2. Deneuville A. J. Appl. Phys. 45:1974;3079.
3. Barret C., Vapaille A. Solid-State Electron. 18:1975;25.
4. Zamora M., Gazecki J., Reeves G.K. Solid-State Electron. 38(10):1995;1771.
5. Green M.A., Shewchun J. Solid-State Electron. 16:1973;1141.
6. Gazecki J., Zamora M., Reeves G.K. International conference on Semiconductor Heteroepitaxy. Montpellier, France, 1995. p. 610.
7. Mi J., Gupta A., Yang C.Y., Zhu J., Yu P.K.L., Warren P., Dutoit M. Appl. Phys. Lett. 69(24):1996;3743.
8. Mi J., Zhang Y., Warren P., Yang C.Y. In: Riley T.J., Gelpey J.C., Roozenboom F., Saito S. (Eds.), Mat. Res. Soc. Symp. Proc. Rapid Thermal and Integrated Processing VI, vol. 470, 1997. p. 121.
9. Barret C., Vapaille A. Solid-State Electron. 19:1976;73.
10. Nowicki R.S. Solid-State Technol. Dec. 1980. p. 83.
11. Martinez A., Esteve D., Guivarc'h A., Auvray P., Henoc P., Pelous G. Solid-State Electron. 23:1980;55.
12. Tseng H.H., Wu C.Y. Solid State Electron. 30(4):1987;383.