Near ideal, high barrier, Au-nGaN Schottky contacts

Journal of Physics D: Applied Physics

Volumn 33, Issue 20, 2000, Pages

  Maffeis, T G G ^a   Simmonds, M C ^a   Clark, S A ^a   Peiro, F ^b   Haines, P ^c   Parbrook, P J ^c  

^a SHEFFIELD HALLAM UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF BARCELONA   (Spain)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; GOLD COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

COWLEY-SZE MODEL; GOLD SCHOTTKY CONTACTS; SCHOTTKY BARRIER HEIGHT;

SCHOTTKY BARRIER DIODES;

EID: 0034293949     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/33/20/101     Document Type: Article

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