Metalorganic vapor-phase epitaxy of GaN from trimethylgallium and tertiarybutylhydrazine

Journal of Crystal Growth

Volumn 252, Issue 1-3, 2003, Pages 144-151

  Hsu, Yu Jen ^a   Hong, Lu Sheng ^a   Tsay, Jing En ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

A3. MOVPE; B1. Gallium nitride; B1. Tertiarybutylhydrazine

Indexed keywords

ADSORPTION; CHEMICAL REACTIONS; FILM GROWTH; LUMINESCENCE; METALLORGANIC VAPOR PHASE EPITAXY;

REACTANTS;

GALLIUM NITRIDE;

EID: 0037401938     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)00947-3     Document Type: Article

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