Optical properties and recombination mechanisms in GaN and GaN:Mg grown by metalorganic vapor phase epitaxy

Journal of Electronic Materials

Volumn 27, Issue 4, 1998, Pages 222-228

  Yablonskii, G P ^a   Gurskii, A L ^a   Lutsenko, E V ^a   Marko, I P ^a   Schineller, B ^b   Guttzeit, A ^b   Schon O ^b,c   Heuken, M ^b,c   Heime, K ^b   Beccard, R ^c   Schmitz, D ^c   Juergensen, H ^c  

^a B I STEPANOV INSTITUTE OF PHYSICS   (Belarus)

^b RWTH AACHEN UNIVERSITY   (Germany)

^c AIXTRON AG   (Germany)

Author keywords

GaN; Metalorganic vapor phase epitaxy (MOVPE); Optical properties; Photoluminescence; Recombination mechanism

Indexed keywords

EID: 0001640508     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0391-x     Document Type: Article

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