Low-Temperature Metalorganic Vapor Phase Epitaxy (MOVPE) of GaN using Tertiarybutylhydrazine

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 2 A, 1999, Pages

  Pohl, Udo W ^b   Knorr, Kerstin ^a   Möller, Carsten ^a   Gernert, Ulrich ^a   Richter, Wolfgang ^a   Bläsing, Jürgen ^b   Christen, Jürgen ^b   Gottfriedsen, Jochen ^a   Schumann, Herbert ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

GaAs substrate; GaN; Low temperature growth; MOVPE; Tertiarybutylhydrazine

Indexed keywords

CRYSTAL GROWTH; HYDRAZINE; LOW TEMPERATURE EFFECTS; SAPPHIRE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACES;

GALLIUM NITRIDE; TERTIARYBUTYLHYDRAZINE;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0033074997     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.38.L105     Document Type: Article

References (12)

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