Dry etching of InGaN/GaN multiple quantum-well LED structures in inductively coupled Cl2/Ar plasmas

Journal of the Korean Physical Society

Volumn 42, Issue 3, 2003, Pages 358-362

  Park, H J ^a   Choi, R J ^a   Hahn, Y B ^a   Im, Y H ^b,c   Yoshikawa, A ^d  

^a Chonbuk National University   (South Korea)

^b Focus Center New York   (United States)

^c RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^d CHIBA UNIVERSITY   (Japan)

Author keywords

InGaN GaN; Light emitting diodes; Multiple quantum wells; Plasma etching

Indexed keywords

EID: 0037357552     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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