Level set approach to simulation of feature profile evolution in a high-density plasma-etching system

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 3, 2001, Pages 701-710

  Im, Y H ^a   Hahn, Y B ^a   Pearton, S J ^b  

^a Chonbuk National University   (South Korea)

^b University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHLOROFLUOROCARBONS; COMPUTER SIMULATION; DRY ETCHING; INDUCTIVELY COUPLED PLASMA; INTERFACES (MATERIALS); ION BOMBARDMENT; SEMICONDUCTING SILICON; SET THEORY;

HIGH-DENSITY PLASMA-ETCHING;

PLASMA ETCHING;

EID: 0035326288     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1370174     Document Type: Conference Paper

References (29)

1. R. J. Shul, G. B. McClellan, S. A. Casalnuovo, D. J. Rieger, S. J. Pearton, C. Constantine, C. Barrat, R. F. Karlicek, Jr., C. Tran, and M. Schurman, Appl. Phys. Lett. 69, 1119 (1996).
2. M. A. Liberman and R. A. Gottscho, in Physics of Thin Films: Plasma Sources for Thin Film Deposition and Etching, edited by M. Francombe and J. Vossen (Academic, New York, 1994), Vol. 18, pp. 1-119.
3. S. A. Smith, C. A. Wolden, M. D. Bremser, A. D. Hanser, R. F. Davis, and W. V. Lampert, Appl. Phys. Lett. 71, 3631 (1997).
4. R. J. Shul, R. D. Briggs, S. J. Pearton, C. B. Vartuli, C. R. Abernathy, J. W. Lee, C. Constantine, and C. Barratt, Mater. Res. Soc. Symp. Proc. 449, 969 (1997).
5. Y. B. Hahn, D. C. Hays, S. M. Donovan, C. R. Abernathy, J. Han, R. J. Shul, H. Cho, K. B. Jung, and S. J. Pearton, J. Vac. Sci. Technol. A 17, 768 (1999).
6. Y. B. Hahn and S. J. Pearton, Korean J. Chem. Eng. 17, 304 (2000).
7. C. Constantine, C. Barratt, S. J. Pearton, F. Ren, J. R. Lothian, W. S. Hobson, A. Katz, C. W. Yang, and P. C. Chao, Electron. Lett. 29, 984 (1993).
8. C. Constantine, C. Barratt, S. J. Pearton, F. Ren, and J. R. Lothian, Appl. Phys. Lett. 61, 2899 (1992);
9. Electron. Lett. 28, 1749 (1992).
10. R. W. Boswell, Phys. Lett. 33A, 457 (1970).
11. M. Tuda, K. Nishikawa, and K. Ono, J. Appl. Phys. 81, 960 (1997).
12. K. Ono and M. Tuda, Jpn. J. Appl. Phys., Part 1 36, 4854 (1997).
13. D. Adalsteinsson and J. A. Sethian, J. Comput. Phys. 118, 269 (1995).
14. D. Adalsteinsson and J. A. Sethian, J. Comput. Phys. 120, 128 (1995).
15. D. Adalsteinsson and J. A. Sethian, J. Comput. Phys. 138, 193 (1997).
16. D. Adalsteinsson and J. A. Sethian, J. Comput. Phys. 148, 2 (1999).
17. H. H. Hwang, T. R. Govindan, and M. Meyyappan, J. Electrochem. Soc. 146, 1889 (1999).
18. S. Osher and J. A. Sethian, J. Comput. Phys. 79, 12 (1988).
19. J. A. Sethian, Commun. Math. Phys. 101, 487 (1985).
20. T. Panagopoulos and D. Economou, J. Appl. Phys. 85, 3435 (1999).
21. P. A. Miller and M. E. Riley, J. Appl. Phys. 82, 3689 (1997).
22. B. Abraham-Shrauner and C. D. Wang, J. Appl. Phys. 77, 3445 (1995).
23. J. A. Sethian, Level Set Methods: Evolving Interfaces in Geometry, Fluid Mechanics, Computer Vision and Material Science (Cambridge University, Cambridge, U.K., 1996).
24. J. A. Sethain, Proc. Natl. Acad. Sci. U.S.A. 93, 4 (1996).
25. M. A. Vyvoda, M. Li, D. B. Graves, H. Lee, M. V. Malyshev, F. P. Klemens, J. T. C. Lee, and V. M. Donnelly, J. Vac. Sci. Technol. B 18, 820 (2000).
26. A. D. Bailey III, M. C. M. van de Sanden, J. A. Gregus, and R. A. Gottscho, J. Vac. Sci. Technol. B 13, 92 (1995).
27. B.-O. Cho, S.-W. Hwang, I.-W. Kim, and S. H. Moon, J. Electrochem. Soc. 146, 350 (1999).
28. W. Möller, Thin Solid Films 228, 319 (1993).
29. A. Barklund, Ph.D. thesis, Uppsala University, Sweden (1992).