Comparison of dry etch techniques for GaN

Electronics Letters

Volumn 32, Issue 15, 1996, Pages 1408-1409

  Shul, R J ^a   McClellan, G B ^a   Pearton, S J ^b   Abernathy, C R ^b   Constantine, C ^c   Barratt, C ^c  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b UNIVERSITY OF FLORIDA   (United States)

^c Qualtx Technology Inc   (United States)

Author keywords

Etching; Gallium nitride

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON CYCLOTRON RESONANCE; MORPHOLOGY; PLASMA DENSITY; PLASMA ETCHING; PLASMAS; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE ROUGHNESS; SURFACES;

INDUCTIVELY COUPLED PLASMA; SEMICONDUCTING GALLIUM NITRIDE;

DRY ETCHING;

EID: 0030188951     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960943     Document Type: Review

References (5)

1. NAKAMURA, S., SENOH, M., and MURAI, T.: 'High-power InGaN/GaN double-heterostructure violet light emitting diodes', Appl. Phys. Lett., 1993, 62, pp. 2390-2392
2. KHAN, M.A., SHUR, M.S., and CHEN, Q.: 'High transconductance AlGaN/GaN optoelectronic heterostructure field effect transistor', Electron. Lett., 1995, 31, pp. 2130-2131
3. ZOPLER, J.C., SHUL, R.J., BACA, A.G., WILSON, R.G., PEARTON, S.J., and STALL, R-A.: 'Ion-implanted GaN junction field effect transistor', Appl. Phys. Lett., 1996, 68, pp. 2273-2275
4. ADESIDA, I., MAHAJAN, A., ANDIDEH, E., KHAN, M.A., OLSON, D.T., and KUZNIA, J.N.: 'Reactive ion etching of gallium nitride in silicon tetrachloride plasmas', Appl. Phys. Lett., 1993, 63, pp. 2777-2779
5. ABERNATHY, C.R.: 'Growth of III-V materials by metalorganic molecular-beam-epitaxy', J. Vac. Sci. Technol. A, 1993, 11, pp. 869-875