Characterisation of GaN films grown on sapphire by low-temperature cyclic pulsed laser deposition/nitrogen rf plasma

Solid-State Electronics

Volumn 47, Issue 3, 2003, Pages 559-563

  Sanguino, P ^a   Niehus, M ^a   Melo, L V ^a   Schwarz, R ^a   Koynov, S ^b   Monteiro, T ^c   Soares, J ^c   Alves, H ^d   Meyer, B K ^d  

^a INSTITUTO SUPERIOR TÉCNICO   (Portugal)

^b BULGARIAN ACADEMY OF SCIENCES   (Bulgaria)

^c UNIVERSITY OF AVEIRO   (Portugal)

^d JUSTUS LIEBIG UNIVERSITY   (Germany)

Author keywords

GaN; Photoluminescence; Pulsed laser deposition; X ray diffraction

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHARACTERIZATION; NITROGEN; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; SAPPHIRE; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

NEAR BAND EDGE EMISSION (NBE);

GALLIUM COMPOUNDS;

EID: 0037343556     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00413-6     Document Type: Conference Paper

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