Photoluminescence and photoluminescence excitation studies of as-grown and P-implanted GaN: On the nature of yellow luminescence

Applied Physics Letters

Volumn 80, Issue 18, 2002, Pages 3349-3351

  Huang, H Y ^a   Chuang, C H ^a   Shu, C K ^a   Pan, Y C ^a   Lee, W H ^a   Chen, W K ^a   Chen, W H ^a   Lee, M C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; CHEMICAL VAPOR; DEEP LEVEL; EMISSION BANDS; EXCITON BOUND; EXCITON LOCALIZATION; FIRST-PRINCIPLES; FREE CARRIERS; GAN FILM; IMPLANTATION PROCESS; LOCALIZED STATE; METAL-ORGANIC; OPTICAL AND ELECTRONIC PROPERTIES; PHOTO-LUMINESCENCE EXCITATION; TOTAL-ENERGY CALCULATIONS; YELLOW LUMINESCENCE;

ARRHENIUS PLOTS; BINDING ENERGY; ELECTRONIC PROPERTIES; EXCITONS; GALLIUM NITRIDE; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79956055143     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1476400     Document Type: Article

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