Layer by layer growth of GaN films by low temperature cyclic process

Materials Research Society Symposium - Proceedings

Volumn 693, Issue , 2002, Pages 81-86

  Sanguino, P ^a   Koynov, S ^a   Niehus, M ^a   Melo, L V ^a   Schwarz, R ^a   Alves, H ^a   Meyer, B K ^a  

^a INSTITUTO SUPERIOR TÉCNICO   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; LOW TEMPERATURE EFFECTS; NITROGEN; PLASMAS; PULSED LASER DEPOSITION; PYROLYSIS; SEMICONDUCTOR GROWTH; STOICHIOMETRY; THERMAL CYCLING; ULTRAVIOLET SPECTROSCOPY; X RAY DIFFRACTION ANALYSIS;

LAYER BY LAYER GROWTH; LOW TEMPERATURE CYCLIC PROCESS; NITROGEN PLASMA TREATMENT; ULTRAVIOLET VISIBLE TRANSMISSION SPECTRA;

GALLIUM NITRIDE;

EID: 0036377223     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)

1. Fundamentals of semiconductors, physics and materials properties