Layer-by-layer growth of GaN on sapphire by low temperature cyclic pulsed laser deposition / nitrogen RF plasma

Materials Research Society Symposium - Proceedings

Volumn 722, Issue , 2002, Pages 181-186

  Sanguino, P ^a   Niehus, M ^a   Koynov, S ^a   Schwarz, R ^a   Alves, H ^b   Meyer, B ^b  

^a INSTITUTO SUPERIOR TÉCNICO   (Portugal)

^b JUSTUS LIEBIG UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EVAPORATION; LIGHT TRANSMISSION; LOW TEMPERATURE OPERATIONS; NITROGEN; PLASMA APPLICATIONS; PULSED LASER DEPOSITION; SAPPHIRE; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

CYCLIC PULSED LASER DEPOSITION (PLD);

GALLIUM NITRIDE;

EID: 0036454327     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-722-k7.6     Document Type: Conference Paper

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