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Volumn 44, Issue 9, 1997, Pages 1514-1522

Hole traps in natural type lib diamond

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; ELECTRIC FIELDS; SCHOTTKY BARRIER DIODES;

EID: 0031235337     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.622609     Document Type: Article
Times cited : (4)

References (19)
  • 15
    • 33747742186 scopus 로고    scopus 로고
    • 1989 MRS Fall Meet.: Diamond, Silicon Carbide, and Related Wide Bandgap Semiconductors, J.T. Glass, R. Messier, and N. Fujimori, Eds. Pittsburgh, PA: Mater. Res. Soc., vol. 162, pp. 309-314, 1989.
    • K. Srikanth, S. Ashok, W. Zhu, A. Badzian, and R. Messier, "Deep level transient spectroscopy study of thin film diamond," in 1989 MRS Fall Meet.: Diamond, Silicon Carbide, and Related Wide Bandgap Semiconductors, J.T. Glass, R. Messier, and N. Fujimori, Eds. Pittsburgh, PA: Mater. Res. Soc., vol. 162, pp. 309-314, 1989.
    • S. Ashok, W. Zhu, A. Badzian, and R. Messier, "Deep Level Transient Spectroscopy Study of Thin Film Diamond," in
    • Srikanth, K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.