Improvement of oxide thickness determination on MOS structures using capacitance-voltage measurements at high frequencies

Materials Science in Semiconductor Processing

Volumn 4, Issue 1-3, 2001, Pages 163-166

  Soliman, L ^a   Duval, E ^a   Benzohra, M ^a   Lheurette, E ^a   Ketata, K ^a   Ketata, M ^a  

^a UNIVERSITÉ DE ROUEN   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CAPACITANCE MEASUREMENT; SEMICONDUCTOR DEVICE STRUCTURES; VOLTAGE MEASUREMENT;

BAND BENDING;

MOS DEVICES;

EID: 0035247257     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00131-1     Document Type: Article

References (3)

1. Sarrabayrouse G, Campabadal F, Prom JL. Private Communication, 1990.
2. Ricco B, Olivo P, Nguyen TN, Kuan T-S, Ferriani G. IEEE Trans Electron Dev 1988;35(4).
3. Mcnutt MJ, Sah CT. J Appl Phys 1975;46(9):3909.