Growth and characterization of In0.28Ga0.72N/GaN multiple-quantum wells on Si(1 1 1)

Journal of Crystal Growth

Volumn 249, Issue 1-2, 2003, Pages 65-71

  Lee, Seung Jae ^a   Jang, Seong Hwan ^a   Lee, Seong Suk ^a   Lee, Cheul Ro ^a  

^a Chonbuk National University   (South Korea)

Author keywords

A1. Nanostructures; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting III V materials

Indexed keywords

DISLOCATIONS (CRYSTALS); ETCHING; GALLIUM NITRIDE; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS; THERMAL EXPANSION; TRANSMISSION ELECTRON MICROSCOPY;

THREADING DISLOCATIONS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0037298033     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02100-0     Document Type: Conference Paper

References (23)

1. Guha S., Bojarczuk N.A. Appl. Phys. Lett. 72:1998;415.
2. Osinsky A., Gangopadhyay S., Yang J.W., Gaska R., Kuksenkov D., Temkin H., Shmagin I.K. Appl. Phys. Lett. 72:1998;551.
3. Zamir S., Meyler B., Zolotoyabko E., Salzman J. J. Crystal Growth. 218:2000;181.
4. Chen P., Zhang R., Zhao Z.M., Zheng Y.D. J. Crystal Growth. 225:2001;150.
5. Watanabe A., Takeuch T., Hirosawa K., Amono H., Hiramatsu K., Akasaki I. J. Crystal Growth. 128:1993;391.
6. Kung P., Saxler A., Zhang X., Walker D., Wang T.C., Razeghi M. Appl. Phys. Lett. 66:1995;2958.
7. Strittmatter A., Krost A., Blasing J., Bimberg D. Phys. Stat. Sol. 176:1999;611.
8. Yang J.W., Sun C.J., Chen Q., Anwar M.Z., Khan M.S., Nikishin S.A., Osinsky A.V. Appl. Phys. Lett. 69:1996;3569.
9. Chen P., Xie S.Y., Chen Z.Z., Zhou Y.G., Feng D. J. Crystal Growth. 213:2000;27.
10. Takeuchi T., Amono H., Hiromatsu K., Sawaki N., Akasaki I. J. Crystal Growth. 115:1991;634.
11. Hiroyasu Ishikawa, Guang-Yuan Zhao, Naoyuki Nakada, Takashi Eagwa, Takashi Jimbo, Jpn. J. Appl. Phys. 38 (1999) 492.
12. Nakamura S., Mukai T., Senoh M. J. Appl. Phys. 76:1994;8189.
13. Kim D.J., Moon Y.T., Song K.M., Choi C.J., Ok Y.W., Seong T.Y., Park S.J. J. Crystal Growth. 221:2000;368.
14. Bai J., Wang T., Izumi Y., Sakai S. J. Crystal Growth. 223:2001;61.
15. Cho H.K., Lee J.Y., Kim C.S., Yang G.M., Sahrma N., Humphreys C. J. Crystal Growth. 231:2001;466.
16. Pereira S., Correia M.R., Monteiro T., Pereira E., Alves E., Sequeira A.D., Franco N. Appl. Phys. Lett. 78:2001;2137.
17. Zamir S., Meyler B., Salzman J. Appl. Phys. Lett. 78:2001;288.
18. Nikishin S.A., Faleev N.N., Antipov V.G., Temkin H., Holtz M. Appl. Phys. Lett. 75:1999;2073.
19. Sanchez-Garcia M.A., Calleja E., Naranjo F.B., Sanchez F.J., Calle F., Munoz E., Sanchez A.M., Pacheco F.J., Molina S.I. J. Crystal Growth. 201/202:1999;415.
20. Xiong Zhang, Soo-Jin Chua, Peng Li, Kok-Boon Chong, MRS. Symp. Proc. 572 (1999) 301.
21. Ho I., Stringfellow G.B. Appl. Phys. Lett. 69:1996;2701.
22. Behbehani M.K., Piner E.L., Liu S.X., El-Masry N.A., Bedair S.M. Appl. Phys. Lett. 75:1999;2202.
23. Naruwaka Y., Kawakami Y., Fujita Sg. Phys. Rev. B. 55:1977;R1938.