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Volumn 572, Issue , 1999, Pages 301-306
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Enhanced optical emission from GaN film grown on composite intermediate layers
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Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS SILICON;
BAND STRUCTURE;
CRYSTAL STRUCTURE;
LIGHT EMISSION;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
MULTILAYERS;
PHOTOLUMINESCENCE;
SAPPHIRE;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTING SILICON;
SUBSTRATES;
X RAY DIFFRACTION ANALYSIS;
BAND EDGE RELATED EMISSION;
COMPOSITE INTERMEDIATE LAYERS;
CRYSTALLINE QUALITY;
GALLIUM NITRIDE;
OPTICAL EMISSION;
X RAY DIFFRACTION SPECTROSCOPY;
SEMICONDUCTING FILMS;
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EID: 0033344334
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-572-301 Document Type: Conference Paper |
Times cited : (2)
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References (12)
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