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Volumn 572, Issue , 1999, Pages 301-306

Enhanced optical emission from GaN film grown on composite intermediate layers

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; BAND STRUCTURE; CRYSTAL STRUCTURE; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MULTILAYERS; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

EID: 0033344334     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-572-301     Document Type: Conference Paper
Times cited : (2)

References (12)
  • 11
    • 33751145508 scopus 로고    scopus 로고
    • Singapore Patent, 9801054-9
    • X. Zhang and S. J. Chua, Singapore Patent, 9801054-9 (1998).
    • (1998)
    • Zhang, X.1    Chua, S.J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.