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Journal of Crystal Growth

Volumn 223, Issue 1-2, 2001, Pages 61-68

Study of dislocations in InGaN/GaN multiple-quantum-well structure grown on (1 1 2̄ 0) sapphire substrate

(4) Bai, J a Wang, T a,b Izumi, Y a Sakai, S a

a UNIVERSITY OF TOKUSHIMA (Japan)

b Nitride Semiconductor Ltd Co (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; DEPOSITION; DISLOCATIONS (CRYSTALS); SAPPHIRE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

GALLIUM NITRIDES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034818515 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(00)01013-7 Document Type: Article

Times cited : (10)

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