Modeling gas-phase nucleation in inductively coupled silane-oxygen plasmas

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 21, Issue 1, 2003, Pages 251-264

  Suh, S M ^a   Girshick, S L ^a   Kortshagen, U R ^a   Zachariah, M R ^a  

^a University of Minnesota   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; BOUNDARY CONDITIONS; CHEMICAL VAPOR DEPOSITION; INDUCTIVELY COUPLED PLASMA; MATHEMATICAL MODELS; MIXTURES; NUCLEATION; OXYGEN; PLASMA DEVICES; REACTION KINETICS; SENSITIVITY ANALYSIS; SILANES;

GAS PHASE NUCLEATION; HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITION; INDUCTIVELY COUPLED PLASMA REACTOR; INDUCTIVELY COUPLED SILANE OXYGEN PLASMAS; SILICON OXIDE CLUSTERING; THERMOCHEMISTRY;

SILICA;

EID: 0037273399     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1531143     Document Type: Article

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