Numerical modeling of silicon oxide particle formation and transport in a one-dimensional low-pressure chemical vapor deposition reactor

Journal of Aerosol Science

Volumn 33, Issue 6, 2002, Pages 943-959

  Suh, S M ^a   Zachariah, M R ^a   Girshick, S L ^a  

^a University of Minnesota   (United States)

Author keywords

Chemical nucleation; Chemical vapor deposition; Homogeneous nucleation; Semiconductor processing; Silane oxidation

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COAGULATION; DIFFUSION; HEAT CONVECTION; NUCLEATION; PARTICLE SIZE ANALYSIS; PARTICLES (PARTICULATE MATTER); PYROLYSIS; REACTION KINETICS; SILANES; SILICA; SURFACE REACTIONS; THERMOPHORESIS; VOLUME FRACTION;

AEROSOL DYNAMICS;

AEROSOLS;

OXYGEN; SILANE; SILICON DIOXIDE;

LOW PRESSURE; MATHEMATICAL MODELING; PARTICLE FLOW; REACTOR; SILICON DIOXIDE; VAPOR DEPOSITION;

AEROSOL; ARTICLE; CHEMICAL REACTION KINETICS; DIFFUSION; MATHEMATICAL MODEL; PARTICLE SIZE; PARTICULATE MATTER; PRIORITY JOURNAL; SIMULATION; STEADY STATE; TEMPERATURE DEPENDENCE; VAPOR PRESSURE;

EID: 0036248052     PISSN: 00218502     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0021-8502(02)00047-2     Document Type: Article

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