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Volumn 352-354, Issue , 1996, Pages 622-627

Initial growth mode of Er silicide on Si(111) by solid phase epitaxy

Author keywords

Angle resolved photoemission; Epitaxy; Metal semiconductor interfaces; Scanning tunneling microscopy; Silicides; Surface electronic phenomena; Surface structure, morphology, roughness, and topography

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; ELECTRON EMISSION; ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; FILM GROWTH; INTERFACES (MATERIALS); MONOLAYERS; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SILICON; SURFACE PHENOMENA; SURFACE ROUGHNESS;

EID: 0030147772     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01216-8     Document Type: Article
Times cited : (15)

References (18)
  • 13
    • 30244574753 scopus 로고
    • PhD Thesis, Amsterdam, Netherlands
    • M. Lohmeier, W.J. Huisman, G. Ter Horst, P.M. Zagwijn, A. Nishiyama, C.L. Nicklin, T.S. Turner and E. Vlieg, to be published in MRS Proc. Fall Meeting 1994; M. Lohmeier, PhD Thesis, Amsterdam, Netherlands (1995).
    • (1995)
    • Lohmeier, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.