STM investigation of 2-and 3-dimensional Er disilicide grown epitaxially on Si(111)

Surface Science

Volumn 355, Issue 1-3, 1996, Pages 13-20

  Wetzel, P ^a   Saintenoy, S ^a   Pirri, C ^a   Bolmont, D ^a   Gewinner, G ^a   Roge, T P ^b   Palmino, F ^b   Savall, C ^b   Labrune, J C ^b  

^a Lab Phys Spectrosc Electron (L   (France)

^b Pole Universitaire   (France)

Author keywords

Angle resolved photoemission; Epitaxy; Metal semiconductor interfaces; Scanning tunneling microscopy; Silicides; Surface electronic phenomena; Surface structure, morphology, roughness, and topography

Indexed keywords

CHEMICAL BONDS; CRYSTAL ATOMIC STRUCTURE; EPITAXIAL GROWTH; ERBIUM; MORPHOLOGY; PHOTOEMISSION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SURFACE PHENOMENA; SURFACE ROUGHNESS;

ANGLE RESOLVED PHOTOEMISSION; ERBIUM DISILICIDE; SURFACE ELECTRONIC PHENOMENA; SURFACE TOPOGRAPHY;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 0030173763     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01349-0     Document Type: Article

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