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Applied Surface Science

Volumn 102, Issue , 1996, Pages 151-155

High crystalline quality erbium suicide films on (100) silicon, grown in high vacuum

(5) Kaltsas, G a Travlos, A b Nassiopoulos, A G a Frangis, N c,d Van Landuyt, J c

a INSTITUTE OF MICROELECTRONICS (Greece)

b INSTITUTE OF MATERIALS SCIENCE (Greece)

c UNIVERSITY OF ANTWERP (Belgium)

d ARISTOTLE UNIVERSITY OF THESSALONIKI (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL MICROSTRUCTURE; ELECTRON DIFFRACTION; ERBIUM COMPOUNDS; EVAPORATION; FILM GROWTH; GRAIN SIZE AND SHAPE; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

ERBIUM SILICIDE FILMS;

SEMICONDUCTING FILMS;

EID: 0030564877 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/0169-4332(96)00036-0 Document Type: Article

Times cited : (13)

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