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Surface Science

Volumn 366, Issue 3, 1996, Pages 491-500

Growth and morphology of epitaxial ErSi1.7 films on Si(111)7×7 studied by scanning tunneling microscopy

(3) Martin Gago J A a Gomez Rodriguez J M b Veuillen, J Y c

a CSIC (Spain)

b UNIVERSIDAD AUTÓNOMA DE MADRID (Spain)

c UNIV GRENOBLE ALPES (France)

Author keywords

Epitaxy; Growth; Scanning tunneling microscopy; Silicides; Silicon; Surface structure, morphology, roughness, and topography

Indexed keywords

CRYSTAL DEFECTS; EPITAXIAL GROWTH; INTERFACES (MATERIALS); MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SURFACE ROUGHNESS; SURFACE STRUCTURE;

ADATOMS; ERBIUM SILICIDES; SURFACE TOPOGRAPHY;

ERBIUM COMPOUNDS;

EID: 0030283261 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/0039-6028(96)00833-3 Document Type: Article

Times cited : (27)

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