Light generating carrier recombination and impurities in Wurtzite GaN/Al2O3 grown by MOCVD

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 633-643

  Kaufmann, U ^a   Kunzer, M ^a   Merz, C ^a   Akasaki, I ^a   Amano, H ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; BAND STRUCTURE; BINDING ENERGY; CHARGE CARRIERS; CRYSTAL IMPURITIES; EXCITONS; MAGNETIC RESONANCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTOR GROWTH; SUBSTRATES;

DONOR ACCEPTOR PAIRS; FREE EXCITONS; GALLIUM NITRIDE; HOLE; NEUTRAL ACCEPTOR; OPTICALLY DETECTED MAGNETIC RESONANCE; ZERO PHONON LINES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029726098     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (38)