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Volumn 210, Issue 2, 1998, Pages 373-383

Impurity-related luminescence of homoepitaxial GaN studied with high magnetic fields

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Indexed keywords


EID: 0032262951     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199812)210:2<373::AID-PSSB373>3.0.CO;2-P     Document Type: Article
Times cited : (31)

References (25)
  • 5
    • 0040932415 scopus 로고    scopus 로고
    • Proc. XXV Conf. Phys. Semicond. Compounds, Jaszowiec, 1996
    • R. STEPNIEWSKI and A. WYSMOLEK, in: Proc. XXV Conf. Phys. Semicond. Compounds, Jaszowiec 1996, Acta Phys. Polon. 90, 681 (1996).
    • (1996) Acta Phys. Polon. , vol.90 , pp. 681
    • Stepniewski, R.1    Wysmolek, A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.