SCOPUS 정보 검색 플랫폼

Volumn 192, Issue 1-4, 2002, Pages 216-243

Development of high-density plasma reactor for high-performance processing and future prospects

Author keywords

Alternative gas chemistries to PFC; Charge up damage; High density plasma; PFC; Pulse time modulated plasma; Ultrahigh frequency plasma

Indexed keywords

CHEMICAL REACTORS; ELECTRODES; FLUOROCARBONS; NEGATIVE IONS; PLASMA ETCHING; PLASMA POLYMERIZATION; PLASMA SOURCES; PULSE TIME MODULATION; SILICA; ULTRAVIOLET RADIATION; VACUUM APPLICATIONS;

PULSE-TIME-MODULATED PLASMAS;

PLASMA DEVICES;

EID: 0037198331 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(02)00029-6 Document Type: Conference Paper

Times cited : (24)

References (60)

1
- 3342878345
- Institute of Electrical Engineering of Japan, Tokyo
- (1993) Proceedings of the 15 Dry Process Sumposium , pp. 45
- Fujiwara, N.¹ Maruyama, T.² Yoneda, M.³ Tsukamoto, K.⁴

2
- 0029292835
- (1995) Jpn. J. Appl. Phys. , vol.34 , pp. 2107
- Nozawa, T.¹ Kinoshita, T.²

3
- 0000749519
- (1993) Jpn. J. Appl. Phys. , vol.33 , pp. 6109
- Ootera, H.¹

4
- 0002177694
- Institute of Electrical Engineering of Japan, Tokyo
- (1995) Proceedings of the 17 Dry Process Symposium , pp. 45
- Ohtake, H.¹ Samukawa, S.²

5
- 0001127456
- (1993) Appl. Phys. Lett. , vol.63 , pp. 2044
- Samukawa, S.¹ Furuoya, S.²

6
- 0001074136
- (1994) J. Vac. Sci. Technol. , vol.12 , pp. 3300
- Samukawa, S.¹ Terada, K.²

7
- 0030521332
- (1996) J. Vac. Sci. Technol. , vol.14 , pp. 3049
- Samukawa, S.¹ Ohtake, H.² Mieno, T.³

8
- 0000719969
- (1995) Appl. Phys. Lett. , vol.67 , pp. 1414
- Samukawa, S.¹ Nakagawa, Y.² Tsukada, T.³ Ueyama, H.⁴ Shinohara, K.⁵

9
- 0000671903
- (1996) J. Vac. Sci. Technol. , vol.14 , pp. 1002
- Samukawa, S.¹ Nakano, T.²

10
- 0032317517
- (1998) IEEE Trans. Plasma Sci. , vol.26 , pp. 1621
- Samukawa, S.¹ Akashi, H.²

11
- 0032181772
- (1998) Jpn. J. Appl. Phys. , vol.37
- Samukawa, S.¹ Tsuda, K.²

12
- 0033446006
- (1999) J. Vac. Sci. Technol. , vol.17 , pp. 2551
- Samukawa, S.¹ Mukai, T.² Tsuda, K.³

13
- 0033469423
- (1999) J. Vac. Sci. Technol. , vol.17 , pp. 2463
- Samukawa, S.¹ Mukai, T.²

14
- 0001890931
- Design of high-density plasma sources for materials processing
- Academic Press, New York
- (1994) Physics of Thin Films , vol.18
- Lieberman, M.A.¹ Gottscho, R.A.²

15
- 0003730831
- Wiley, New York
- (1994) Principles of Plasma Discharges and Materials Processing
- Lieberman, M.A.¹ Lichtenberg, A.J.²

16
- 0001652284
- (1970) Plasma Phys. Cont. Fusion , vol.26 , pp. 1147
- Bosewell, R.W.¹

17
- 0000268482
- (1974) Jpn. J. Appl. , vol.1 , Issue.SUPPL. 2 , pp. 435
- Hosokawa, N.¹ Matsuzaki, R.² Tasuo, A.³

18
- 84950903592
- (1976) Jpn. J. Appl. Phys. , vol.15 , pp. 13
- Horiike, Y.¹ Shibagaki, M.²

19
- 0017553707
- (1997) Jpn. J. Appl. Phys. , vol.16 , pp. 1979
- Suzuki, K.¹ Okudaira, S.² Sakudo, N.³ Kanomata, I.⁴

20
- 0000346058
- (1981) Jpn. J. Appl. Phys. , vol.20
- Horiike, Y.¹ Okano, H.² Yamazaki, T.³ Horie, H.⁴

21
- 0005681934
- (1979) J. Electrochem. Soc. , vol.126 , pp. 319
- Vesson, J.L.¹

22
- 3943072151
- (1979) Appl. Phys. Lett. , vol.34 , pp. 192
- Chapman, B.N.¹ Minkeiwicz, V.J.²

23
- 0019904146
- (1982) Jpn. J. Appl. Phys. , vol.21
- Matsuo, S.¹ Adachi, Y.²

24
- 0005681935
- (1990) Appl. Phys. Lett. , vol.57 , pp. 403
- Samukawa, S.¹ Suzuki, Y.² Sasaki, M.³

25
- 84881126135
- (1993) J. Vac. Sci. Technol. , vol.A11 , pp. 152
- Hopwood, J.¹ Guarnieri, C.R.² Whitehair, S.J.³ Cuomo, J.J.⁴

26
- 0005682092
- Philadelphia, PS2-WeA5
- (1996) Proceedings of the 43rd National Symposium of American Vacuum Society
- Yokogawa, K.¹ Itabashi, N.² Suzuki, K.³ Tachi, S.⁴

27
- 0034207338
- (2000) Microelectron. Eng. , vol.53 , pp. 69-76
- Samukawa, S.¹

28
- 0029488190
- (1995) Jpn. J. Appl. Phys. , vol.34 , pp. 6805
- Samukawa, S.¹ Nakagawa, Y.² Tsukada, T.³ Ueyama, H.⁴ Shinohara, K.⁵

29
- 0001555452
- (1998) J. Appl. Phys. , vol.84 , pp. 1222
- Malyshev, M.V.¹ Donnelly, V.M.² Samukawa, S.³

30
- 0347131171
- (1997) J. Vac. Sci. Technol. , vol.A15 , pp. 550
- Malyshev, M.V.¹ Donnelly, V.M.²

31
- 0005762190
- (1998) Jpn. J. Appl. Phys. , vol.37 , pp. 878
- Donnelly, V.M.¹ Malyshev, M.V.² Kornblit, A.³ Ciampa, N.A.⁴ Colonell, J.I.⁵ Lee, J.T.C.⁶

32
- 5844325521
- (1996) J. Vac. Sci. Technol. , vol.A14 , pp. 1076
- Donnelly, V.M.¹

33
- 0000475425
- (1998) J. Appl. Phys. , vol.84 , pp. 137
- Malyshev, M.V.¹ Donnelly, V.M.² Kornbilt, A.³ Ciampa, N.A.⁴

34
- 0003730831
- Wiley, New York
- (1994) Principles of Plasma Discharges and Materials Processing , pp. 306
- Lieberman, M.A.¹ Lichtenberg, A.J.²

35
- 0000208288
- (1995) Plasma Sources Sci. Technol. , vol.4 , pp. 332
- Godyak, V.A.¹ Piejak, R.B.² Alexandrovich, B.M.³

36
- 0031101854
- (1997) Phys. Rev. E , vol.55 , pp. 3450
- Schwabedissen, A.¹ Bench, E.C.² Roberts, J.R.³

37
- 0003839414
- Springer, Berlin
- (1991) Gas Discharge Physics , pp. 37
- Raizer, Y.P.¹

38
- 0000977383
- (1994) Phys. Rev. A , vol.50 , pp. 1382
- Rescigno, T.N.¹

39
- 0000370943
- (1995) Phys. Rev. A , vol.51 , pp. 2265
- Griffin, D.C.¹ Pindzola, M.S.² Gorczyca, T.W.³ Badnell, N.R.⁴

40
- 0032317517
- (1998) IEEE Trans. Plasma Sci. , vol.26 , pp. 1621
- Samukawa, S.¹ Akashi, H.²

41
- 0022664937
- (1986) J. Appl. Phys. , vol.59 , pp. 940
- Danner, D.A.¹ Hess, D.W.²

42
- 0000125959
- (1999) J. Vac. Sci. Technol. , vol.A17 , pp. 774
- Samukawa, S.¹

43
- 0001681751
- (1987) Phys. Rev. B , vol.36 , pp. 6613
- Winters, H.F.¹ Haarer, D.²

44
- 84931484367
- (1982) Jpn. J. Appl. Phys. , vol.21 , pp. 141
- Tachi, S.¹ Miyake, K.² Tokuyama, T.³

45
- 0002865111
- Institute of Electrical Engineers of Japan
- (1993) Proceedings of the 15 Dry Process Symposium , pp. 193
- Sakai, T.¹ Hayashi, H.² Abe, J.³ Horioka, K.⁴ Okano, H.⁵

46
- 0032050772
- (1998) Jpn. J. Appl. Phys. , vol.37 , pp. 2394
- Tatsumi, T.¹ Hayashi, H.² Morishita, S.³ Noda, S.⁴ Okigawa, M.⁵ Itabashi, N.⁶ Hikosaka, Y.⁷ Inoue, M.⁸

47
- 0026120681
- (1991) J. Phys. , vol.24 , pp. 277
- Itoh, H.¹

48
- 0033446006
- (1999) J. Vac. Sci. Technol. , vol.A17 , pp. 2551
- Samukawa, S.¹ Mukai, T.² Tsuda, K.³

49
- 0031167544
- (1997) Jpn. J. Appl. Phys. , vol.36 , pp. 3730
- Taoyoda, H.¹ Iio, M.² Sugai, H.³

50
- 0027589898
- (1993) Jpn. J. Appl. Phys. , vol.32
- Takahashi, K.¹ Hori, M.² Maruyama, K.³ Kishimoto, S.⁴ Goto, T.⁵

51
- 0027641933
- (1993) Jpn. J. Appl. Phys. , vol.32
- Takahashi, K.¹ Hori, M.² Goto, T.³

52
- 0001762163
- (1995) Jpn. J. Appl. Phys. , vol.34
- Miyata, K.¹ Takahashi, K.² Kishimoto, S.³ Hori, M.⁴ Goto, T.⁵

53
- 0033683042
- (2000) J. Vac. Sci. Technol. B , vol.18 , pp. 166
- Samukawa, S.¹ Mukai, T.²

54
- 0029322184
- (1995) IEEE Device Lett. , vol.16 , pp. 220
- Cheung, K.P.¹ Pai, C.S.²

55
- 0034512399
- AVS, Monterey
- (2000) Proceedings of the International Symposium on Plasma Process-Induced Damage , pp. 164
- Carrere, J.-P.¹ Oberlin, J.-C.² Haond, M.³

56
- 0029700141
- AVS, Monterey
- (1996) Proceedings of the International Symposium on Plasma Process-Induced Damage , pp. 54
- Dao, T.¹ Wu, W.²

57
- 0001920390
- AVS, Monterey
- (2000) Proceedings of the International Symposium on Plasma Process-Induced Damage , pp. 157
- Joshi, M.¹ McVittee, J.P.² Sarawat, K.³

58
- 0000267069
- AVS, Monterey
- (1999) Proceedings of the International Symposium on Plasma Process-Induced Damage , pp. 192
- Cismura, C.¹ Shohet, J.L.² McVittee, J.P.³

59
- 0033413515
- (1999) J. Vac. Sci. Technol. , vol.A17 , pp. 3209
- Woodworth, J.R.¹ Blain, M.G.² Jarecki, R.L.³ Hamilton, T.W.⁴ Aragon, B.P.⁵

60
- 0035878242
- (2001) Jpn. J. Appl. Phys. , vol.40
- Samukawa, S.¹ Sakamoto, K.² Ichiki, K.³

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