New ultrahigh-frequency plasma discharge for overcoming the limitations of etching processes

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 14, Issue 3, 1996, Pages 1002-1006

  Samukawa, Seiji ^a   Nakano, Toshiki ^b  

^a NEC CORPORATION   (Japan)

^b NATIONAL DEFENSE ACADEMY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000671903     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580121     Document Type: Article

References (9)

1. S. Samukawa, Jpn. J. Appl. Phys. 33, 2133 (1994).
2. N. Fujiwara, T. Maruyama, M. Yoneda, and K. Tsukamoto, in Proceedings of the 15th Dry Process Symposium (The Institute of Electrical Engineering of Japan, Tokyo, 1993), p. 45.
3. S. Samukawa, Jpn. J. Appl. Phys. 29, 896 (1990).
4. S. Samukawa, Y. Nakagawa, T. Tsukada, H. Ueyama, and K. Shinohara, Appl. Phys. Lett. 67, 1414 (1995).
5. S. Samukawa, Y. Nakagawa, T. Tsukada, H. Ueyama, and K. Shinohara, Jpn. J. Appl. Phys. 34, 6806 (1995).
6. T. Nakano, N. Sadeghi, and R. A. Gottscho, Appl. Phys. Lett. 58, 458 (1991).
7. Rikagaku Ziten (Iwanami Shoten, Tokyo, 1989), p. 1434 (in Japanese).
8. K. Suzuki, K. Ninomiya, S. Nishimatsu, and O. Okada, Jpn. J. Appl. Phys. 25, L373 (1986).
9. T. Nakano, R. A. Gottscho, N. Sadeghi, D. J. Trevor, R. W. Boswell, A. J. Perry, T. C. Lee, K. P. Giapis, and J. Margot, Oyo Buturi 61, 711 (1992).