Charging of underlayer at via etch causing slow down in oxide etch rate

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn , Issue , 1996, Pages 54-57

  Dao, Thuy ^a   Wu, Wei ^a  

^a Semiconductor Technology Laboratory   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILMS; ELECTRIC CHARGE; ELECTRONS; ION BOMBARDMENT; OXIDES; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS; TRANSISTORS;

CHARGING PHENOMENON; ETCH RATE; FLOATING METAL LINE; PLASMA OXIDE ETCHING;

PLASMA ETCHING;

EID: 0029700141     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)